Will Bicmos Stay Competitive For Mmw Applications?

Patrice Garcia,Alain Chantre,Sebastien Pruvost,Pascal Chevalier,Sean T. Nicolson, David Roy,Sorin P. Voinigescu, Christophe Garnier

PROCEEDINGS OF THE IEEE 2008 CUSTOM INTEGRATED CIRCUITS CONFERENCE（2008）

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摘要

This work summarizes upcoming millimeter wave and high speed applications which will benefit from advanced SiGe BiCMOS process. The performance of a 230GHzf(T) 280GHz f(max) process is detailed and future improvements are discussed. Intrinsic transistor performance for millimeter wave design has been compared with that of advanced 65mn Low-Power CMOS. To help process comparison, design examples are also given and circuit optimizations to reach optimum noise figure are discussed. Recent realizations at 24GHz and 77GHz in SiGe BiCMOS are presented, demonstrating state of the art results on both receivers.

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关键词

wireless communication,radar,noise figure,bicmos,millimeter wave,transistor,transistors,cmos integrated circuits

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