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Injection Phototransistors

H Mincai, L Li, Ha Qijun,C Binruo,C Changsheng

Sensors & Actuators: A. Physical（1994）

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Abstract
The photoelectronic characteristics of an injection phototransistor are analysed by the concept of indirect coupling photodetection; the characteristic curves of the device are measured and explained. The photo-dark-current ratio and the photoelectronic response time of the injection phototransistor are compared with those of a conventional phototransistor, both devices being based on a common illuminated PN junction.
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