Devices Physics
DEVICE PHYSICS OF NARROW GAP SEMICONDUCTORS(2010)
Abstract
A series of excellent fundamental properties of HgCdTe make it the almost ideal material for infrared detectors (Long 1970; Levinstein 1970; Dornhaus and Nimtz 1976). There are two photon detector classification categories: photovoltaic and photoconductive. The semiconductor properties of HgCdTe make it suitable for fabricating both detector kinds (Long 1970; Kruse 1979; Kingston 1978; Eisenman et al. 1977; Broudy and Mazurczyk 1981; Tang and Tong 1991; Xu and Fang 1996).
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