Integration of CMOS Logic Circuits with Lateral Power MOSFET
Intelligent Systems Modelling & Simulation(2013)
Abstract
This paper describes the CMOS logic circuit which is composed with LDMOSFET. Compared to a conventional MOSFET, the proposed LDMOSFET is considered to show a high power tolerance in CMOS inverter circuit and be well adaptable in display driver circuits which require high breakdown voltage and trans-conductance. The channel in LDMOSFET encloses a junction-type source and is an important parameter for determining the transfer characteristics of CMOS inverter. Electrical characteristics of CMOS inverter with LDMOSFETs are studied by using TCAD MEDICI simulator. The voltage transfer characteristics and on-off switching properties are examined. The digital logic levels of the output voltages are analyzed from the transfer curves and circuit operation. The high and low logic voltages show a strong dependency on the channel doping concentration. The CMOS circuit in a display driver circuit shows a large power handling capability with low ON conductance.
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Key words
breakdown voltage,channel,trans-conductance,driver circuits,tcad medici simulator,high breakdown voltage,lateral power mosfet,low logic voltage,digital logic levels,cmos inverter circuit,cmos logic circuits,technology cad (electronics),digital logic level,ldmosfet,cmos circuit,circuit operation,logic voltage,high power tolerance,display driver circuit,display driver circuits,cmos inverter,cmos logic circuit,logic gates,transfer characteristic
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