A comparative study of depth profiling of interface statesusing charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs

Kyong Taek Lee,Chang Yong Kang,Hyun-Sik Choi,Seung-Ho Hong,Gil-Bok Choi,Jae Chul Kim,Seung-Hyun Song,Rock-Hyun Baek,Min-Sang Park,Hyun Chul Sagong,Byoung Hun Lee,Gennadi Bersuker,Hsing-Huang Tseng,Raj Jammy,Yoon-Ha Jeong

Microelectronic Engineering（2011）

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摘要

Charge pumping and low frequency noise measurements for depth profiling have been studied systematically using a set of gate stacks with various combinations of IL and HfO"2 thicknesses. The distribution of generated traps after HCI and PBTI stress was also investigated. The drain-current power spectral density made up all of the traps of IL in 0

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关键词

various combination,low frequency noise measurement,comparative study,interface statesusing charge,drain-current power spectral density,HfO2 gate,gate stack,depth profiling,PBTI stress

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