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Direct Measurement of Interfacial Structure in Epitaxial Gd2O3 on GaAs (001) Using Scanning Tunneling Microscopy

Y. P. Chiu,M. C. Shih,B. C. Huang,J. Y. Shen,M. L. Huang,W. C. Lee,P. Chang,T. H. Chiang,M. Hong,J. Kwo

Microelectronic Engineering（2011）

Cited 2|Views2
Key words
GaAs,Gd2O3,Scanning tunneling microscopy,Interfacial stacking,Electronic information
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