The influence of growth temperature and precursors’ doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique

In this paper we report on the low-temperature growth (Ts=30–250°C) of zinc oxide thin films by atomic layer deposition method using two different organic zinc precursors: diethylzinc and (for comparison) dimethylzinc, and deionized water as an oxygen precursor. An evident influence of growth temperature and precursors’ doses on electron concentration and Hall mobility of obtained zinc oxide layers is presented. The lowest achieved room-temperature electron concentration was at the level of 1016cm−3 with mobility up to 110cm2/Vs.