Study of Ni/Si(100) solid-state reaction with Y addition

The characteristics of Ni/Si(100) solid-state reaction with yttrium (Y) addition are studied in this paper. Film stacks of Ti(20nm)/TiN(40nm)/Ni(8nm)/Y(4nm)/Ni(8nm)/Si(100) and Ti(20nm)/TiN(40nm)/Ni(7nm)/Y(6nm)/Ni(7nm)/Si(100) were prepared by physical vapor deposition. After solid-state reaction between metal films and Si was performed by rapid thermal annealing, various material analyses show that NiSi forms even with the addition of Y, and Ni silicidation is accompanied with Y diffusion in Ni film toward its top surface. The electrical characteristic measurements reveal that no significant Schottky barrier height modulation with the addition of Y occurs.