Top injection reactor tool with in situ spectroscopic ellipsometry for growth and characterization of ALD thin films
Microelectronic Engineering(2008)
Abstract
Ta-N based thin films were grown by thermal atomic layer deposition (ALD) with an alternating supply of the reactant source TBTDET (tert-butylimidotris(diethylamido)tantalum) and NH"3 (ammonia). The films were deposited using a newly designed and constructed atomic layer deposition prototype tool combined with several in situ metrology. It was observed that thin films were successfully deposited on a 300mm Wafer with a saturated growth rate of approximately 0.55A/cycle at 270^oC. The as deposited films resulted in the formation of Ta(C)N consisting of 38at% Ta, 32at% N and 10at% C. With in situ spectroscopic ellipsometry (SE) the growing behaviour of the film was investigated and compared to atomic force microscopy (AFM) images.
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Key words
top injection reactor tool,ald thin film,thermal atomic layer deposition,thin film,atomic force microscopy,situ metrology,reactant source,growth rate,atomic layer deposition prototype,situ spectroscopic ellipsometry,ellipsometry,atomic layer deposition
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