Impact of porous SiOCH on propagation performance measured for narrow interconnects of the 45nm node
Microelectronic Engineering(2007)
摘要
With the dimensions scaling down at each new technology node, introduction of porous dielectric materials is required to reduce the interconnect capacitance. Nevertheless, these materials are very prone to damage during integration, thus increasing their K-value (2.5 as deposited for the 45nm node) in the final circuit. In order to characterize these effects, high-frequency measurements and electromagnetic simulations were carried out on specific microstrip structures. Taking into account typical circuit characteristics, time-domain extraction of delay values and crosstalk levels were then performed, enabling a precise analysis of moisture uptake effects from a performance point of view.
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关键词
ulk degradation,high-frequency measurement,propagation performance,moisture uptake effect,45 nm node,new technology node,porous sioch,account typical circuit characteristic,hf measurements,delay value,performance point,final circuit,porous dielectric material,interconnects,propagation,crosstalk level,electromagnetic simulation,narrow interconnects,high frequency,time domain
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