Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
Microelectronic Engineering(2005)
Abstract
In this paper the effects from the high-¿dielectric thickness and the metal gate deposition technique on the mobility of n-channel MOS transistors are investigated. The results reveal mobility degradation due to an increase of charge density in the dielectric and / or at the material interfaces, not efficiently compensated by the screening effect from the gate. We correlate this mobility degradation to the reduction observed in a comparison between metal and poly-Si gated MOSFETs. It is shown that the mobility can be improved by using different metals deposition technique, which indicates that the mobility reduction is related to the deposition technique.
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Key words
kdielectric thickness,metal gate deposition technique,mobility degradation,mobility reduction,high- κ metal gate mos transistor,screening effect,poly-si gated mosfets,metal deposition technique,charge density,deposition technique,n-channel mos transistor,oxide thickness,metal deposition,different metal,tan nmos device,high-k dielectric thickness,material interface
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