Auger lifetimes in ideal InGaSb/InAs superlattices
Journal of Electronic Materials - Special issue on the 1992 U.S. Workshop on the Physics and Chemistry of HgCdTe and Other IR Materials(1993)
Abstract
Quantitative calculations are reported of both band-to band Auger and radiative recombination lifetimes in thin-layered type
II InxGa1−x Sb/InAs superlattices with energy gaps in the 5–17 μm range, using accurate band structure and numerical techniques. Results
for an 11 μm superlattice are compared with similar calculations for bulk HgCdTe and a HgTe/CdTe superlattice having the same
energy gap. The results show the n-type Auger rates to be comparable and the p-type rates to be suppressed by three orders
of magnitude in some experimentally realizable structures. Thus, well fabricated III–V superlattices appear to be excellent
candidates as a new class of infrarer detectors.
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Key words
auger lifetime,inas superlattices,ideal ingasb,radiative recombination lifetime,ingasb/inas superlattices,band structure,radiative recombination,energy gap,superlattices
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