基本信息
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Bio
Zheyang Zheng (Member, IEEE) received the B.Eng. degree in electronic science and technology from Zhejiang University, Hangzhou, China, in 2016, and the Ph.D. degree in electronic and computer engineering (ECE) from The Hong Kong University of Science and Technology (HKUST), Hong Kong, in 2021.
He is currently with the School of Microelectronics, University of Science and Technology of China (USTC), Hefei, China. His research interests include semiconductor theory, device physics, device-circuit interplay, device/IC manufacturing, wide-bandgap semiconductor electron devices and integration for high-frequency RF/microwave, and high-efficiency power conversion applications.
Research Interests
Papers共 132 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE Electron Device Lettersno. 99 (2024): 1-1
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.196-199, (2024)
APPLIED PHYSICS LETTERSno. 4 (2024)
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.232-235, (2024)
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICSno. 3 (2024): 3113-3121
IEEE Transactions on Power Electronicsno. 99 (2024): 1-9
Zheyang Zheng,Hang Liao,Sirui Feng, Yingchen Yang, Yutao Geng,Tao Chen,Junting Chen,Mengyuan Hua,Kevin J. Chen
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.291-294, (2024)
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)pp.724-728, (2024)
IEEE Transactions on Power Electronicsno. 99 (2024): 1-9
Yingchen Yang,Sirui Feng, Zongjie Zhou,Tao Chen, Zheng Wu, Yangming Du,Yat Hon Ng,Hang Liao, Yumeng Huang, Heng Wang,Zheyang Zheng,Kevin J. Chen
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.343-346, (2024)
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Author Statistics
#Papers: 133
#Citation: 1387
H-Index: 21
G-Index: 32
Sociability: 5
Diversity: 0
Activity: 3
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