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Bio
主要研究领域是新型功率器件和智能功率集成电路。指导博士生和硕士生五十余名,鉴定科技成果12项,获国家专利两项,获国家科技进步三等奖,国家发明四等奖、电子部科技进步奖等8项。在IEEE等发表论文四十余篇,被邀为国际杂志《Solid-State Electronics》审稿人。作为课题负责人之一的八·五攻关项目"新型功率MOS器件"于1996年11月获国家计委,国家科委和财政部联合表彰。在IEEE Trans ED(1994,No.12)等中,提出了CLIGBT有非平衡电子抽出的模型和网络模型及模型直接嵌入法。并提出一种具有键合衬底的绝缘栅场效应晶体管(IGBT),此结构可普适于电导型调制功率器件,获发明专利。用国产单晶硅材料取代昂贵的进口外延片制作IGBT。在IEEE Trans. ED(1994,No.12)提出CLIGBT瞬态响应模型。在Solid-State Electron(1991,No.3)提出功率MOS晶体管热特性分析的全热程电热模型。在Solid-State Electron(2000,No.1)中提出电导调制型功率器件的非平衡载流子非准静态抽出模型。在ICCCAS(2002 June)提出了SOI高压横向器件的新结构及其界面电荷耐压模型。
Research Interests
Papers共 750 篇Author StatisticsCo-AuthorSimilar Experts
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期刊级别
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IEEE TRANSACTIONS ON ELECTRON DEVICESno. 1 (2024): 431-439
IEEE Electron Device Lettersno. 99 (2024): 1-1
IEEE Transactions on Power Electronicsno. 99 (2024): 1-7
Teng Liu,Wentong Zhang,Qiyi Wu, Lihui Gu,Nailong He, Sen Zhang, Yuting Liu, Hongbo Li, Lingying Wu, Shi YaoCai, Shixiong Chong, Yizhen Li,
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.426-429, (2024)
Microelectronics Journal (2023): 105669-105669
IEEE Transactions on Electron Devicesno. 12 (2023): 6486-6491
IEEE Electron Device Lettersno. 10 (2023): 1708-1711
IEEE Transactions on Electron Devicesno. 4 (2023): 1843-1848
IEEE Transactions on Electron Devicesno. 2 (2023): 662-666
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Author Statistics
#Papers: 758
#Citation: 9297
H-Index: 42
G-Index: 65
Sociability: 7
Diversity: 3
Activity: 65
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