基本信息
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个人简介
Young Pil Kim (M'00) received the B.S. degree in physics from the Korea Institute of Technology, Taejon, Korea, in 1990, the M.S. degree in physics from Korea Advanced Institute of Science and Technology (KAIST), Taejon, in 1992, and the Ph.D. degree in materials science and engineering from KAIST in 1998.
Since 1998, he has been a Member of Technical Staff at the Semiconductor R&D Center, Samsung Electronics, Kyonggi-Do, Korea. His research interests reliability issues in device integration including dielectric breakdown, hot carrier degradation, and transistor leakage current degradation for DRAM and other devices.
研究兴趣
论文共 59 篇作者统计合作学者相似作者
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ECS Transactionsno. 32 (2022): 1229-1229
ECS Journal of Solid State Science and Technologyno. 3 (2019): P180-P185
ECS Meeting Abstractsno. 31 (2018): 1084-1084
mag(2014)
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mag(2013)
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作者统计
#Papers: 46
#Citation: 838
H-Index: 23
G-Index: 28
Sociability: 5
Diversity: 0
Activity: 0
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