Yong-Hae Kim

Yong-Hae Kim received the B.S. degree and Ph.D. degree in physics from the Korea Advanced Institute of Science and Technology, Daejeon, Korea, in 1993 and 1997, respectively. From 1997 to 2000, he was with Hynix Semiconductor and developed the 0.13-$\mu\hbox{m}$-DRAM technology. He has been with the Electronics and Telecommunications Research Institute, Daejeon, since 2000, where he has been involved in flexible display technology, such as low-temperature poly-Si TFT on plastic substrate and active matrix OLED. His research interests include digital paper, application of metamaterial, and wireless power transmission.