T. Y. Tang - Dept. of Electrical Engineering, National Central University

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Enhancing FeFET Performance Through H2 Plasma Treatment: Improving Stability, Conductance, and Hamming Distances in FeCAM Designs

Z.-R. Huang, Z.-K. Chen, Y.-T. Tsai, C.-S. Pai,W.-N. Chang, C.-C. Lin,Y.-T. Tang

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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Morphotropic Phase Boundary-Enhanced Polarization and High-Temperature Retention in Ferroeletric FET

Y. -T. Tang, C. -S. Pai, Z. -R. Haung, Y. -T. Tsai, Z. -K. Chen

2024 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI TSA (2024)

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Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed

Y. -T. Tsai, C. -R. Liu, Y. -T. Chen, S. -M. Wang, Z. -K. Chen, C. -S. Pai, Z. -R. Haung,F. -S. Chang, Z. -X. Li,K. -Y. Hsiang,M. -H. Lee,Y. -T. Tang

arXiv (Cornell University) (2023)

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Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement Through Stressed Alumina and Angstrom- Laminated HfZrO2

Z-R. Huang,S-M. Wang, C-R. Liu, Y-T. Chen,Y-T. Tsai, Z-K. Chen, C-S. Pai,Y. -T. Tang

2023 SILICON NANOELECTRONICS WORKSHOP, SNWpp.47-48, (2023)

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First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials

S. -C. Lee, Y. -T. Chen, C. -R. Liu, S. -M. Wang,Y. -T. Tang,F. -S. Chang, Z. -X. Li,K. -Y. Hsiang,M. -H. Lee

arXiv (Cornell University) (2023)

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3-Bits-per-cell 2T32CFE Nvtcam by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching

E. R. Hsieh,Y. T. Tang, C. R. Liu,S. M. Wang, Y. L. Hsueh, R. Q. Lin, Y. X. Huang, Y. T. Chen

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2023)

引用1浏览0EIWOS引用

Characterization of Double HfZrO2 Based FeFET Toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z.-F. Lou,C.-Y. Liao,K.-Y. Hsiang,C.-Y. Lin,Y.-D. Lin,P.-C. Yeh, C.-Y. Wang,H.-Y. Yang,P.-J. Tzeng,T.-H. Hou,Y.-T. Tang,M. H. Lee

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (2022)

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NVDimm-FE: A High-density 3D Architecture of 3-Bit/c 2tncfe to Break Great Memory Wall with 10 Ns of PGM-pulse, 10 10 Cycles of Endurance, and Decade Lifetime at 103 °C

E. R. Hsieh,J. K. Chang,T. Y. Tang,Y. J. Li,C. W. Liang, M. Y. Lin,S. Y. Huang,C. J. Su,J. C. Guo,Steve S. Chung

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）

引用3浏览0EIWOS引用

Superlattice HfO2-ZrO2 Based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 Cycles for Multibit NVM

C. -Y. Liao,Z. -F. Lou,C. -Y. Lin,A. Senapati, R. Karmakar,K. -Y. Hsiang,Z. -X. Li,W. -C. Ray,J. -Y. Lee, P. -H. Chen,F. -S. Chang, H. -H. Tseng,C. -C. Wang,J. -H. Tsai,Y. -T. Tang,S. T. Chang,C. W. Liu,S. Maikap,M. H. Lee

2022 International Electron Devices Meeting (IEDM) (2022)

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The First Embedded 14nm FeFinFET NVM: 2T1CFE Array As Electrical Synapses and Activations for High-performance and Low-power Inference Accelerators

E. R. Hsieh, Wei‐Chi Tsai, Yi-Wei Lin,C. H. Liu,Steve S. Chung,Ying–Tsan Tang, Jiacun Su,T. P. Chen, Sheng‐Yi Huang, T. J. Chen,Osbert Cheng

2021 Symposium on VLSI Technologypp.1-2, (2021)

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