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个人简介
He has been engaged in the research fields concerning GaAs MES FETs, Liquid Phase Epitaxy of GaAs, growth and characterization of bulk GaAs, correlation between GaAs crystal defects, and FET performances and Plasma Excited Molecular Beam Epitaxy. And he is now greatly interested in MBE growth of Nitride Semiconductors including InN, In-rich InGaN, and AlGaN, targeting their applications to electronic and optoelectronic devices. He has been a leader of two big projects, regional consortium project, NEDO, and national project on high-power, high-frequency GaN electronic devices, METI. And He is taking part in many research organizations, such as The Japan Society of Applied Physics, The Institute of Electrical Engineers of Japan, The Institute of Electronics, Information and Communication Engineers, The Japanese Association for Crystal Growth and American Material Research Society.
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Japanese Journal of Applied Physics (2021)
The Japan Society of Applied Physics (2021)
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