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个人简介
Zhichao Yang received the B.S. and M.S. degrees in applied physics and physics from the Beijing University of Aeronautics and Astronautics, Beijing, China, in 2007 and 2011, respectively. He has been pursuing the Ph.D. degree with the ECE Department, The Ohio State University, Columbus, OH, USA, since 2012.
His current research interests include transport studies on III-Nitrides, fabrication and characterization of GaN hot electron transistors.
研究兴趣
论文共 19 篇作者统计合作学者相似作者
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High-Frequency GaN Electronic Devicespp.109-157, (2019)
2016 74th Annual Device Research Conference (DRC)pp.1-2, (2016)
Device Research Conferencepp.153-154, (2014)
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作者统计
#Papers: 19
#Citation: 318
H-Index: 9
G-Index: 15
Sociability: 4
Diversity: 2
Activity: 0
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