Xiangdong Li - Key Lab Wide Band Gap Semicond Mat & Devices, Xidian Univ

基本信息

Career Trajectory

Bio

Xiangdong Li (S’15–M’16) received the B.S. and M.S. degrees in microelectronics from Xidian University, Xi’an, China, in 2013 and 2016, respectively. He is currently pursuing the Ph.D. degree with the Department of Electrical Engineering, Katholieke Universiteit Leuven, Leuven, Belgium. He is also with the GaN Group, Interuniversity Microelectronics Center, Leuven. His current research interests include monolithic integration, reliability, and the design of power ICs on GaN-on-SOI.

Research Interests

Papers共 52 篇Author StatisticsCo-AuthorSimilar Experts

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1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 m Thin Buffer

Xiangdong Li,Junbo Wang,Jincheng Zhang,Zhanfei Han,Shuzhen You, Long Chen,Lezhi Wang,Zilan Li,Weitao Yang,Jingjing Chang,Zhihong Liu,Yue Hao

IEEE ELECTRON DEVICE LETTERSno. 1 (2024): 84-87

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1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer

Xiangdong Li,Junbo Wang,Jincheng Zhang,Zhanfei Han,Shuzhen You, Long Chen,Lezhi Wang,Zilan Li,Weitao Yang,Jingjing Chang,Zhihong Liu,Yue Hao

IEEE Electron Device Lettersno. 1 (2024): 84-87

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Report of GaN HEMTs on 8-in Sapphire

Junbo Wang,Xiangdong Li, Long Chen, Tong Liu,Zhanfei Han,Shuzhen You,Lezhi Wang,Zilan Li,Yue Hao,Jincheng Zhang

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 99 (2024): 1-4

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High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

Junbo Wang,Xiangdong Li, Long Chen, Ye Yuan, Tongxin Lu,Shuzhen You,Lezhi Wang,Zilan Li, Jincheng Zhang,Xinqiang Wang,Yue Hao

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.522-525, (2024)

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Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection

Tong Liu,Xiangdong Li,Zhanfei Han, Lili Zhai,Junbo Wang,Shuzhen You,Jincheng Zhang,Jie Zhang, Zhibo Cheng, Yuanhang Zhang, Qiushuang Li,Yue Hao

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYno. 99 (2024): 170-175

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p-GaN Gate HEMTs on 6-inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics

Zhanfei Han,Xiangdong Li, Jian Ji, Long Chen,Lezhi Wang, Zhibo Cheng,Weitao Yang,Shuzhen You,Zilan Li,Yue Hao,Jincheng Zhang

IEEE Electron Device Lettersno. 99 (2024): 1-1

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Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Xiangdong Li,Meng Wang,Hongyue Wang,Jincheng Zhang,Shuzhen You,Junbo Wang,Zhanfei Han,Weitao Yang,Yue Hao

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 4 (2024): 2550-2556

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Review of Reliability of Silicon Carbide Power Diodes

Qiushuang Li,Xiangdong Li,Zhizhe Wang, Jun Luo, Rui Deng, Kaibin Chen, Yongle Zhong

2024 7th International Conference on Energy, Electrical and Power Engineering (CEEPE)pp.1149-1154, (2024)

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Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications

Xiangdong Li,Jie Zhang, Jian Ji, Zhibo Cheng, Junbo Wang, Long Chen,Lezhi Wang,Shuzhen You, Lili Zhai, Qiushuang Li, Yuanhang Zhang, Tong Liu,

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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InAlN/GaN MISHEMTs With 120 nm T-Shape Recessed Gates on Silicon With Excellent mm-Wave Noise Performance

Guangjie Gao,Zhihong Liu,Lu Hao,Hanghai Du,Weichuan Xing,Hong Zhou,Weihang Zhang,Xiangdong Li,Jincheng Zhang,Yue Hao

IEEE Microwave and Wireless Technology Lettersno. 4 (2024): 399-402

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