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个人简介
Woonghwan Ryu received the B.S. degree in computer engineering from Kwangwoon University, Seoul, Korea, in 1994, and the M.S. and Ph.D. degrees in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), in Daejeon, in 1997 and 2001, respectively.
From 2000 to 2001, he was a Visiting Researcher in the Electronics Packaging Group, Gintic Institute of Manufacturing Technology, Singapore. From 1997 to 2001, he was under educational program as an Associate Engineer at Samsung Electronics Co., Ltd. In 2001, he joined the Signal Integrity Engineering Group, Intel Corporation, where he is currently a Staff Signal Integrity Engineer. He is now working on signal/power integrity analysis in Intel Chipset DDR-I/II/III memory interface, high-frequency EM modeling, and broadband device characterization. In addition, he is currently leading the Frequency-Domain (FD) Working Group to develop high-frequency FD methodologies including topology optimization, EM modeling, and GHz VNA characterization. He has been working with GHz system signal integrity analysis, high-speed VLSI interconnection, microwave package modeling, RF circuit design, and over GHz and low-power clock distribution, especially RF clock distribution. He has authored and co-authored more than 50 technical publications including four pending patents, journals, and conference proceeding papers.
研究兴趣
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Sang-Hwa Lee,B. Kim,Moon‐Ku Han,T. Park,K. Lee,Byung‐Chul Lee,K. Yu,J. Cha, Dae-Hyun Kim,H. Nah,S. Lee, J. Kim,
semanticscholar(2019)
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