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个人简介
Hyun-Ho Kim received the B.S. degree in material engineering from Hanyang University, Seoul, South Korea, in 1992 and the M.S. and Ph.D. degrees from Korea Advanced Institute of Science and Technology, Daejeon, South Korea, in 1994 and 1999, respectively. His research topic in the Ph.D. course was the development of Pb-based ferroelectric materials for FRAM and DRAM applications.
In 1999, he joined a Technology Development Team in Samsung Electronics, Yongin, South Korea, where he has played a major role in developing FRAM devices, such as stand-alone 4 Mb and 32 Mb FRAM and FRAM-embedded smart card. He has researched on multi-ferroic materials, especially $BiFeO_3$, for future memory device applications in Cambridge University, UK, from 2004 to 2006. His current interests are memory-cell design, process integration, device evaluation, and failure analysis of FRAM devices.
研究兴趣
论文共 18 篇作者统计合作学者相似作者
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#Papers: 18
#Citation: 203
H-Index: 8
G-Index: 14
Sociability: 5
Diversity: 2
Activity: 0
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