基本信息
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Bio
Wim F. A. Besling received the degree of chemical engineering, in 1993, and the Ph.D. degree on in situ Raman spectroscopy and laser-induced Fluorescence during laser-induced chemical vapor deposition, in 1999, both from Technische Universiteit, Delft, The Netherlands.
He joined Philips Research Laboratories in 1999 to work on diffusion barriers for Cu interconnects. From to 2000 to 2002 he has developed extensive expertise in atomic layer deposition of high-k dielectics at IMEC/Philips Research Leuven. From 2002 to 2007, he was part of the team research and development on advanced metallization at the alliance Philips Semiconductors and then NXP semiconductors in Crolles, France. From 2007, he is a project leader within System in Package group at NXP Semiconductors Research, Eindhoven, The Netherlands, aiming at the research and sevelopment of 3D interconnect (e.g., through silicon vias, wafer level packaging solutions), the integration of high density capacitors for RF decoupling and DC–DC conversion applications, and “More than Moore” microsystems and technology. He authored or co-authored many journal and conference publications, and holds several patents
Research Interests
Papers共 66 篇Author StatisticsCo-AuthorSimilar Experts
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mag(2014)
Cited22Views0Bibtex
22
0
mag(2012)
Cited23Views0Bibtex
23
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K. B. Jinesh,Y. Lamy,E. Tois,R. Forti, M. Kaiser, F. Bakker,H. J. Wondergem,F. Roozeboom,W. F. A. Besling
Journal of Materials Researchno. 8 (2011): 1629-1635
mag(2010)
Cited23Views0Bibtex
23
0
ECS Transactionsno. 4 (2009): 389-397
ECS Meeting Abstractsno. 23 (2009): 2053-2053
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Author Statistics
#Papers: 30
#Citation: 706
H-Index: 14
G-Index: 26
Sociability: 5
Diversity: 1
Activity: 0
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