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Papers共 40 篇Author StatisticsCo-AuthorSimilar Experts

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Accounting for Carrier Mobility Reduction due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs
V. O. Turin, Y. V. Ilyushina, M. A. Shcherbina, B. A. Rakhmatov,G. I. Zebrev, S. A. Kokin, S. V. Makarov
Russian Microelectronicsno. 1 (2024): S6-S13
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A Mass-in-Mass Chain and the Generalization of the Dirac Equation with an Eight-Component Wave Function and with Optical and Acoustic Branches of the Dispersion Relation
V. O. Turin, Y. V. Ilyushina,P. A. Andreev, A. Yu. Cherepkova, D. D. Kireev, I. V. Nazritsky
Russian Microelectronicsno. 1 (2024): S299-S305
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Compact Modeling of Body Effect for “Extrinsic” MOSFETs
Valentin Turin,Maxim Shcherbina, Roman Shkarlat, Oleg Kshensky, Vyacheslav Poyarkov,Gennady Zebrev, Sergey Kokin,Sergey Makarov,Badurdin Rakhmatov
2022 Moscow Workshop on Electronic and Networking Technologies (MWENT)pp.1-14, (2022)
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Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes
Valentin O. Turin, Roman S. Shkarlat, Vyacheslav N. Poyarkov, Oleg N. Kshensky, Zebrev I. Zebrev,Benjamín Iniguez,Michael S. Shur
International Conference on Micro- and Nano-Electronics 2021 (2022)
Cited1Views0Bibtex
1
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An Accurate Analytical Modeling of Contact Resistances in MOSFETs
G. D. Bokitko,D. S. Malich,V. O. Turin,G. I. Zebrev
2021 IEEE 32nd International Conference on Microelectronics (MIEL)pp.97-99, (2021)
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A Linear "Extrinsic" Compact Model For Short-Channel Mosfet Drain Current Asymptotic Dependence On Drain Bias In Saturation Regime
V Turin, R. Shkarlat, V Poyarkov, O. Kshensky,G. Zebrev,B. Iniguez,M. Shur
INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2018 (2019)
Cited3Views0Bibtex
3
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Author Statistics

#Papers: 40

#Citation: 515

H-Index: 13

G-Index: 22

Sociability: 5

Diversity: 0

Activity: 0

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