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个人简介
Troy L. Graves-abe received the Ph.D. degree in electrical engineering from Princeton University, Princeton, NJ, USA.
He manages the TSV and Far Back End of Line Integration department at GLOBALFOUNDRIES. His former work has included the development of Cu TSV technology and integration into IBM's 300 mm fab and wafer finishing line for interposer and 3D applications. Prior to joining the 3D team, he worked on device and contact metallization, and was part of the team that developed and qualified high-\rm metal gate for the 32 nm nod. He has published more than 25 conference and journal papers.
研究兴趣
论文共 40 篇作者统计合作学者相似作者
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Chandrasekharan Kothandaraman,Sami Rosenblatt, J. Safran,Philip J. Oldiges, P. Kulkarni-Kerber, J. Xumalo,William F. Landers,Jinping Liu, J. A. Oakley, S. Butt,Troy L. Graves-Abe,Norman Robson,
John Safran, Giri N. K. Rangan, Venkata Nr Vanukuru, Sandeep Torgal,Vikram Chaturvedi, Sarath K. P. Lal, Shahid Butt,Gary Maier,Alberto Cestero,Thuy Tran-Quinn,Joyeeta Nag,Sami Rosenblatt,
Prakash Periasamy, Michael Iwatake,Menglu Li, Joyce Liu,Troy Graves-Abe, Thuy Tran Quinn,Subramanian S. Iyer
mag(2015)
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mag(2015)
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