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Tsuyoshi Takahashi was born in Tochigi, Japan, in 1963. He received the B.E. and M.E. degrees in science and engineering from University of Tsukuba, Ibaraki, Japan, in 1985 and 1987, respectively.
In 1987, he joined the Fujitsu Laboratories, Kanagawa, Japan, where he has been engaged in research on fabrication technology for InP-based HEMTs and InGaP-emitter HBTs.
Mr. Takahashi is a member of the Japan Society of Applied Physics, the Institute of Electronics, Information and Communication Engineers of Japan.
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论文共 12 篇作者统计合作学者相似作者
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2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY (2004)
Kazuhiro Sawada,Kozo Makiyama,Toshiyuki Takahashi, Ken Nozaki, Motohiro Igarashi, Junichiro Kon, Noriko Hara
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGSpp.65-68, (2003)
Hisao Shigematsu,Masasada Sato, T. Suzuki,Toshiyuki Takahashi,Kenji Imanishi,Naoki Hara,H. Ohnishi, Yasutora Watanabe
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