基本信息
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Career Trajectory
Bio
Toshifumi Irisawa was born in Tokyo, Japan, in 1975. He received the B.S., M.S., and Ph.D. degrees in applied physics from the University of Tokyo, Tokyo, Japan, in 1998, 2000, and 2003, respectively. His Ph.D. dissertation is the study of growth and transport properties of Si/Ge heterostructures.
He joined the Research and Development Center, Toshiba Corporation, Kawasaki, Japan, in 2003. Since 2003, he has been a member of the Millennium Research for Advanced Information Technology (MIRAI) Project, Association of Super-Advanced Electronics Technology (ASET), Tsukuba, Japan, working on strained-Si, SiGe, SOI, and GOI materials and devices.
Dr. Irisawa is a member of the Japan Society of Applied Physics.
Research Interests
Papers共 209 篇Author StatisticsCo-AuthorSimilar Experts
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期刊级别
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合作机构
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)
Materiano. 8 (2023): 520-526
Applied Physics Expressno. 6 (2023): 061004-061004
MATERIALS HORIZONSno. 6 (2023): 2254-2261
Advanced electronic materialsno. 4 (2023)
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Author Statistics
#Papers: 208
#Citation: 3246
H-Index: 29
G-Index: 49
Sociability: 6
Diversity: 3
Activity: 39
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