Tom Schram - Silicon Processing and Device Technology Division, IMEC

基本信息

Career Trajectory

Bio

No content for now

Research Interests

Papers共 271 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Process implications on the stability and reliability of 300 mm FAB MoS₂ field-effect transistors

Yu. Yu. Illarionov, A. Karl,Q. Smets,B. Kaczer,T. Knobloch,L. Panarella,T. Schram,S. Brems,D. Cott,I. Asselberghs,T. Grasser

NPJ 2D MATERIALS AND APPLICATIONSno. 1 (2024): 1-7

Cited0Views0WOSNATUREBibtex

Process implications on the stability and reliability of 300 mm FAB MoS₂ field-effect transistors

Yu. Yu. Illarionov, A. Karl,Q. Smets,B. Kaczer,T. Knobloch,L. Panarella,T. Schram,S. Brems,D. Cott,I. Asselberghs,T. Grasser

NPJ 2D MATERIALS AND APPLICATIONSno. 1 (2024)

Cited0Views0Bibtex

Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs

Luca Panarella,Ben Kaczer, Quentin Smets, Stanislav Tyaginov, Pablo Saraza Canflanca, Andrea Vici,Devin Verreck,Tom Schram, Dennis Lin,Theresia Knobloch,Tibor Grasser, César Lockhart de la Rosa,

npj 2D Materials and Applicationsno. 1 (2024): 1-9

Cited0Views0Bibtex

Direct Evidence of Contact-Induced Variability in Industrially-Fabricated Highly-Scaled MoS2 FETs

Luca Panarella,Ben Kaczer,Quentin Smets,Stanislav Tyaginov, Pablo Saraza Canflanca,Andrea Vici,Devin Verreck,Tom Schram,Dennis Lin,Theresia Knobloch,Tibor Grasser, Cesar de la Rosa,

crossref（2024）

Cited0Views0Bibtex

Overview of scalable transfer approaches to enable epitaxial 2D material integration

Steven Brems,Souvik Ghosh,Quentin Smets,Marie-Emmanuelle Boulon, Andries Boelen,Koen Kennes,Hung-Chieh Tsai,Francois Chancerel,Clement Merckling,Pieter-Jan Wyndaele,Jean-Francois De Marneffe,Tom Schram,

2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DATpp.1-2, (2023)

Cited0Views0EIWOSBibtex

Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer

S. Ghosh,Quentin Smets, S. Banerjee,Tom Schram, K. Kennes, R. Verheyen, P. Kumar, M.-E. Boulon,Benjamin Groven, H. M. Silva,S. Kundu,Daire Cott,

VLSI Technology and Circuitspp.1-2, (2023)

Cited0Views0EIWOSBibtex

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs

L. Panarella,Ben Kaczer,Quentin Smets,Devin Verreck,Tom Schram,Daire Cott,Dennis Lin,Stanislav Tyaginov,I. Asselberghs,Cesar J. Lockhart de la Rosa,Gouri Sankar Kar,Valeri Afanas'ev

IRPSpp.1-6, (2023)

Cited0Views0EIWOSBibtex

Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach

S. Kundu, D. H. van Dorp,T. Schram,Q. Smets, S. Banerjee,B. Groven,D. Cott,S. Decoster, P. Bezard,F. Lazzarino,K. Banerjee, S. Ghosh,

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.1-2, (2023)

Cited0Views0EIWOSBibtex

Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach

S. Kundu, D. H. van Doip,Tom Schram,Quentin Smets, S. Banerjee,Benjamin Groven,Daire Cott,S. Decoster, P. Bezard,F. Lazzarino,K. Banerjee, S. Ghosh,

VLSI Technology and Circuitspp.1-2, (2023)

Cited0Views0EIBibtex

Growth of High-Performance Single-Crystalline MoS <sub>2</sub> on Sapphire Substrates Using an Industrial Reactor for Next-Generation Electronics

Henry Medina Silva, Yuanyuan Shi, Benjamin Groven,Sreetama Banerjee,Ankit Nalin Mehta, Iryna Kandybka, Akane Inoue, Joris Verdin, Pawan Kumar,Quentin Smets, Souvik Ghosh,Daire Cott,

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)

Cited0Views0Bibtex

Author Statistics

Co-Author

Co-Institution

D-Core

合作者
学生
导师

No result temporarily, you can search similar Scholar with the same research interest

Data Disclaimer

The page data are from open Internet sources, cooperative publishers and automatic analysis results through AI technology. We do not make any commitments and guarantees for the validity, accuracy, correctness, reliability, completeness and timeliness of the page data. If you have any questions, please contact us by email: report@aminer.cn