基本信息
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Bio
Thomas Blon (M'99) was born in Buchloe, Germany, in 1968. He received the Dipl. Ing. Elektrotechnik degree from Technische Universität München, Munich, Germany, in 1994.
From 1994 to 1998, he was with the Siemens Seminconductor Division in Munich working as an Analog Design Engineer on xDSL analog front-ends. From 1999 to 2001, he was with the R/W Channel Group of Infineon Technolgies Corporation, based in Santa Cruz, CA, designing high-speed CMOS mixed-signal building blocks for hard disk drive and optical storage applications. In 2002, he joined Xignal Technologies AG, Munich, Germany, where he is involved in the design of highly linear data processing circuits such as low-noise amplifiers and data converters. He currently holds nine international patents.
Research Interests
Papers共 62 篇Author StatisticsCo-AuthorSimilar Experts
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Lionel Petit, Tom Fournier, Géraldine Ballon,Cédric Robert,Delphine Lagarde,Pascal Puech,Thomas Blon,Benjamin Lassagne
arxiv(2024)
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Elías Angulo-Cervera, Frederico Orlandini-Keller,Ilona Lecerf,Pierre Moritz,Fabrice Mathieu,David Bourrier,Samuel Charlot,Richard Haettel,Thibaut Devillers,Liviu Nicu,Thomas Blon,Lise-Marie Lacroix,
2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)pp.45-48, (2023)
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Georgiana Maties, Marion Luu, Kosseila Ait-Oukaci,Ilona Lecerf,Cecile Marcelot,Anais Fondet,Simon Cayez,Christophe Gatel,Thomas Blon,Bruno Chaudret,Lise-Marie Lacroix
JOURNAL OF PHYSICAL CHEMISTRY Cno. 48 (2022): 20668-20677
D. Yi,L. Peres, A. Pierrot, S. Cayez,R. Cours,B. Warot-Fonrose,C. Marcelot,P. Roblin,K. Soulantica,T. Blon
NANO RESEARCHno. 1 (2022): 1606-1613
EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICSno. 24 (2022): 4205-4211
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