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个人简介
Thomas Bertaud received the Engineering Diploma degree in nanophysics and materials and the Ph.D. degree in micro and nanoelectronics from the Polytechnic National Institute of Grenoble, Grenoble, France, in 2007 and 2010, respectively. His Ph.D. thesis was on the behavior of high-$\kappa$ dielectric materials integrated into metal-insulator-metal capacitors in the high-frequency domain, which was carried out at Characterization and Microwave Laboratory, Chambéry, France, and Microelectronics Technology Laboratory, Grenoble.
He was an intern with Soitec, Bernin, France, in 2006, and STMicroelectronics, Crolles, France, in 2007, where he worked on the development of new electrical characterization techniques for silicon-on-insulator substrates and chemical mechanical polishing processes. Since 2011, he has been with the Innovations for High Performance Microelectronics, Frankfurt (Oder), Germany, where he is currently working on resistance-change random access memory devices.
研究兴趣
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ACS Applied Materials & Interfacesno. 7 (2014): 5056-5060
ECS Meeting Abstractsno. 24 (2013): 1878-1878
Frontiers in Electronic Materialspp.233-245, (2013)
ECS Transactionsno. 10 (2013): 163-170
IOP Conference Series-Materials Science and Engineering (2012)
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