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Toshiharu Katayama received the B.S. and M.S. degrees in physics and the Ph.D. degree from Osaka University, Osaka, Japan, in 1984, 1986, and 1999, respectively. He joined the LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Hyogo, Japan, in 1986. He was involved in failure analysis and material evaluation of advanced memory devices from 1986 to 1999. From 1999 to 2003, he was engaged in the development of inline analysis technology and metrology including scatterometry for advanced semiconductor devices and he proceeded with Renesas Technology Corporation, Hyogo from 2003 to 2005. Since 2005, he has been involved in failure analysis and material evaluation of advanced SoC, MCU, and A&P devices although he transferred to Renesas Electronics Corporation in 2010 and to Renesas Semiconductor Manufacturing Company, Ltd., Hyogo, in 2014. He was also a Visiting Professor with Osaka University, in 2006, and was also involved in the advanced mixed signal device integration in Renesas Semiconductor Engineering Corporation from 2007 to 2009. He is currently a Section Manager of the Analysis and Evaluation Technology Department, Renesas Semiconductor Manufacturing Company, Ltd., Ibaraki, Japan. He is also a member of the Japan Society of Applied Physics. He is currently a member of the Japan Program Committee of the International Symposium on Semiconductor Manufacturing.
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IEEE Transactions on Semiconductor Manufacturingno. 4 (2017): 315-316
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