Tatsuro Maeda

Tatsuro Maeda was born in Ehime, Japan. He received the B.S. and M.S. degrees in chemical engineering from Ehime University, Ehime, Japan, in 1990 and 1993, respectively, and the Ph.D. degree in material science from Tokyo Institute of Technology, Tokyo, Japan, in 1996. In 1996, he joined the Electron Device Division, Electrotechnical Laboratory, Ibaraki, Japan where he has been engaged in the research on fabrication and characterization of ultrasmall SOI-MOSFETs, nano-scale Si-related devices, and single electron transistors for future ULSIs. In 2001, he joined the MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), Advanced Semiconductor Research Center-National Institute of Industrial Science and Technology (ASRC-AIST), Ibaraki, Japan, where he is now working as a Member of New Transistor Structures and Measurement/Analysis Technology Group. Dr. Maeda is a member of the Japan Society of Applied Physics.