Various types of SiC power module product have been developed in recent years. Therefore, the device model developing speed and the flexibility corresponding to each product are further required. In this article, a novel high-accuracy data-driven modeling method was developed using 1.2-, 3.3-, and 6.5-kV full-SiC power module measurement data. A static model was rapidly developed based on an automated approach using an optimization algorithm instead of the general model parameter extracting method by using a fixed model equation. Furthermore, the simulated annealing method was used to minimize the objective function that is calculated based on the difference in dynamic characteristics by optimizing adjustment parameters to reduce the error. The parameter optimization method focuses on not only I _D and V _DS but also I _G and V _GS waveforms. As a result, the relative errors of di/dt, dv/dt, and switching loss in the wide current region decreased considerably while maintaining the consistency of the I _G and V _GS waveforms. The modeling method can be used to realize numerous full-SiC power module models easily. The proposed algorithm provides fast, automated, and high-accuracy modeling. Furthermore, the optimization of the model can facilitate considerable expansion of the full-SiC power module usage.