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Bio
Tahir Khan received the B.Tech. degree in electrical engineering from the Indian Institute of Technology, Chennai, India, in 2004 and the M.S. degree in electrical engineering from the Rensselaer Polytechnic Institute, Troy, NY, in 2006. His graduate research involved the improvement of oxide–semiconductor interfacial properties for wide-bandgap semiconductors (SiC, GaN). A significantly improved MOS interface for GaN led to the successful demonstration of a $\hbox{SiO}_{2}$-based enhancement mode GaN MOSFET, with breakthrough channel mobility.
Since 2006, he has been with Freescale Semiconductor, Tempe, AZ, where he is currently an R&D Engineer with the SMARTMOS Technology Center, actively involved in developing 0.25- and 0.13-$\mu\hbox{m}$ smart-power technologies.
Research Interests
Papers共 158 篇Author StatisticsCo-AuthorSimilar Experts
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crossref(2023)
A Chudasama, F Dickens,T Khan, R Dexter-Spooncer,A Shah,J Stowell,M Loebinger, A Manuel, S Iyer, M Polkey,R José
M. G. Lebwohl,M. Worm,L. F. Stein Gold,C. Bangert, P. Schmid-Grendelmeier,T. Khan,Pinaki Biswas,M. Dibonaventura,G. Chan,K. Terry,H. Valdez,C. Clibborn
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Rheumatologyno. Supplement_1 (2021)
Surgery (oxford)no. 9 (2020): 526-535
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