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Research Interests

Papers共 26 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
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A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND
Ilho Myeong, Suhwan Lim,Taeyoung Kim,Sanghyun Park, Suseong Noh,Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Munkang Choi, Kiheun Lee,Sangwoo Han,
IEEE International Reliability Physics Symposiumpp.9B.3-1-9B.3-6, (2024)
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Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET
Taeyoung Kim, Suhwan Lim, Ilho Myeong,Sanghyun Park, Suseong Noh,Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Moonkang Choi, Kiheun Lee,Sangwoo Han,
IEEE International Reliability Physics Symposium (2024)
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Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET
Taeyoung Kim, Suhwan Lim, Ilho Myeong,Sanghyun Park, Suseong Noh,Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Moonkang Choi, Kiheun Lee,Sangwoo Han,
2024 IEEE International Reliability Physics Symposium (IRPS) (2024)
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Development of an onboard waste-to-energy process for disposing marine plastics debris
Mino Woo, Hyeok-Sang Ryu,Yunjang Gu,Tae-Young Kim, Jung Kwon Kim,Hee Soo Kim,Dong-Ha Lim
Journal of Material Cycles and Waste Managementpp.1-10, (2024)
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Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET
Taeyoung Kim, Suhwan Lim, Ilho Myeong,Sanghyun Park, Suseong Noh,Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Moonkang Choi, Kiheun Lee,Sangwoo Han,
2024 IEEE International Reliability Physics Symposium (IRPS)pp.P6.EM-1-P6.EM-4, (2024)
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Comprehensive Design Guidelines of Gate Stack for QLC and Highly Reliable Ferroelectric VNAND
Suhwan Lim,Taeyoung Kim, Ilho Myeong,Sanghyun Park, Suseong Noh,Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Moonkang Choi, Kiheun Lee,Sangwoo Han,
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
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