Taeheun KimDiv Mat Sci & Engn Hanyang Univ关注立即认领分享关注立即认领分享基本信息浏览量:0职业迁徙个人简介暂无内容研究兴趣论文共 3 篇作者统计合作学者相似作者按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选时间引用量主题期刊级别合作者合作机构Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) ChannelHoonhee Han,Seokmin Jang,Duho Kim,Taeheun Kim, Hyeoncheol Cho, Heedam Shin,Changhwan ChoiELECTRONICS(2022)引用6浏览0引用60Improved ferroelectric characteristics of ALD lanthanum-doped hafnium oxide thin film by controlling post-cooling timeBoncheol Ku,Yooncheol Shin,Youngjun Lee,Taeheun Kim,Changhwan ChoiSSRN Electronic Journal (2022)引用3浏览0引用30Analog Synaptic Transistor with Al-Doped HfO2 Ferroelectric Thin FilmDuho Kim,Yu-Rim Jeon,Boncheol Ku,Chulwon Chung,Tae Heun Kim,Sanghyeok Yang, Uiyeon Won,Taeho Jeong,Changhwan ChoiACS APPLIED MATERIALS & INTERFACES(2021)引用31浏览0WOS引用310作者统计合作学者合作机构D-Core合作者学生导师暂无相似学者,你可以通过学者研究领域进行搜索筛选数据免责声明页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn