T. Trajkovic - Cambridge Microelectronics Limited

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论文共 54 篇作者统计合作学者相似作者

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Experimental Investigation of a Novel 750V SJ-RET-IGBTs (superjunction Recessed Emitter Trench IGBTs) for the Automotive Application

Arthur Su, Jianing Guan, Rongzhen Qin,Tanya Trajkovic,Florin Udrea

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024pp.29-32, (2024)

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The Optimization of 3.3 Kv 4H-Sic JBS Diodes

Arne Benjamin Renz,Vishal Ajit Shah,Oliver James Vavasour,Guy William Clarke Baker, Yegi Bonyadi,Yogesh Sharma,Vasantha Pathirana,Tanya Trajkovic,Phil Mawby,Marina Antoniou,Peter Michael Gammon

IEEE TRANSACTIONS ON ELECTRON DEVICES（2022）

引用11浏览0EIWOS引用

Termination Area Design for Reduced Leakage Current and Improved Ruggedness of HV IGBTs

Mingchao Gao,Rui Jin,Vasantha Pathirana, Chunwa Chan,Nishad Udugampola,Tanya Trajkovic,Florin Udrea

Japanese Journal of Applied Physics（2022）

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Engineering the Schottky Interface of 3.3 Kv SiC JBS Diodes Using a P2O5 Surface Passivation Treatment

A. Benjamin Renz,Oliver James Vavasour,Amador Pérez-Tomás,Qin Ze Cao,Vishal Shah,Yeganeh Bonyadi,Vasantha Pathirana,Tanya Trajkovic,G.W.C. Baker,Phillip Mawby,Peter M. Gammon

Materials Science Forum (2022): 190-194

引用1浏览0引用

Compact Trench Floating Field Rings Termination for 10kv+ Rated SiC N-Igbts

Neophytos Lophitis,Peter M. Gammon,A. Benjamin Renz,Tian Xiang Dai,Amit Tiwari,Tanya Trajkovic,Phillip Mawby,Florin Udrea,Marina Antoniou

Materials Science Forum (2022): 598-602

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Engineering the Schottky Interface of 3.3 Kv SiC JBS Diodes Using a P<sub>2</sub>O<sub>5</sub> Surface Passivation Treatment

Arne Benjamin Renz,Oliver James Vavasour,Amador Pérez‐Tomás,Qin Ze Cao,V. A. Shah,Yeganeh Bonyadi,V. Pathirana,T. Trajković,G.W.C. Baker,P.A. Mawby,Peter M. Gammon

Materials science forum (2022): 190-194

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750V Narrow Mesa IGBT Vs SJ-IGBT: Performance and SC-SOA Assessment

L. Ngwendson,C. Kong,S. Gupta, A. Su,Y. Wang, M. Qin, Q. Xiao,H. Luo, X. Ning, Y. Yao,T. Trajkovic,F. Udrea,V. Pathirana, C. Chan,N. Udugampola

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)pp.237-240, (2022)

引用1浏览0EIWOS引用

3.3 Kv SiC JBS Diodes Employing a P2O5 Surface Passivation Treatment to Improve Electrical Characteristics

Arne Benjamin Renz,Oliver James Vavasour,Vishal Ajit Shah,Vasantha Pathirana,Tanya Trajkovic,Yeganeh Bonyadi,Ruizhu Wu,Jose Angel Ortiz-Gonzalez,Xiaoyun Rong,Guy William Clarke Baker,Philip Mawby,Peter Michael Gammon

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)pp.5283-5288, (2021)

引用2浏览0EIWOS引用

Normally-OFF Diamond Reverse Blocking MESFET

J. Canas,A. C. Pakpour-Tabrizi,T. Trajkovic,F. Udrea,D. Eon,E. Gheeraert,R. B. Jackman

IEEE Transactions on Electron Devices（2021）

引用8浏览0EIWOS引用

Snap-back Free 3.3kv RC-IGBT with Enhanced Safe Operating Area

Tanya Trajkovic,Vasantha Pathirana,Nishad Udugampola,Florin Udrea,Chunlin Zhu,Yangang Wang

International Symposium on Power Semiconductor Devices and IC'spp.359-362, (2021)

引用3浏览0EIWOS引用

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