基本信息
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Bio
Takashi Nagira was born in Mie, Japan, on April 1, 1981. He received the Bachelor’s degree in physics and the Master’s degree in electronics and applied physics from the Tokyo Institute of Technology, Meguro, Japan, in 2003 and 2005, respectively.
In 2005, he joined Mitsubishi Electric Corporation, Hyogo, Japan, where he has been involved in the development of the compound semiconductor laser for optical communication, especially the epitaxial growth of InGaAlAs.
Mr. Nagira is a member of the Japan Society of Applied Physics.
Research Interests
Papers共 11 篇Author StatisticsCo-AuthorSimilar Experts
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2010 36TH EUROPEAN CONFERENCE AND EXHIBITION ON OPTICAL COMMUNICATION (ECOC), VOLS 1 AND 2 (2010)
36th European Conference and Exhibition on Optical Communication (2010)
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