基本信息
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Bio
Thomas J. C. Hosea received the Ph.D. degree from the University of Edinburgh, Edinburgh, U.K., in 1978.
At the University of Surrey, Guildford, U.K., where he is now Senior Lecturer in Optoelectronics (equivalent to Associate Professor), he has established a program of research into the spectroscopic investigation of the band structure of low-dimensional semiconductor devices and nanostructures with operating wavelengths in the range of 300–1500 nm, including nitrides and quantum dots, and has pioneered modulated reflectance as a nondestructive characterization tool for vertical-cavity surface-emitting lasers and resonant-cavity LEDs
Research Interests
Papers共 82 篇Author StatisticsCo-AuthorSimilar Experts
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International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA) (2019), paper OTh3C.4 (2019)
International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA) (2019)
Grace M T Chai,T. J. C. Hosea, N. E. Fox,K. Hild,A. B. Ikyo,I. P. Marko,A. Bachmann,K. Kashani-Shirazi,S. Arafin,M.-C. Amann,S. J. Sweeney
Light, Energy and the Environment 2018 (E2, FTS, HISE, SOLAR, SSL) (2018)
Grace M T Chai,C A Broderick,E P O’Reilly, Z Othaman,S R Jin,J P Petropoulos, Y Zhong,P B Dongmo,J M O Zide,S J Sweeney,T J C Hosea
Semiconductor Science and Technologyno. 9 (2015)
Grace M. T. Chai,C. A. Broderick,E. P. O'Reilly, Z. Othaman,S. R. Jin,J. P. Petropoulos, Y. Zhong,P. B. Dongmo,J. M. O. Zide,S. J. Sweeney,T. J. C. Hosea
SEMICONDUCTOR SCIENCE AND TECHNOLOGYno. 9 (2015)
2nd Annual International Conference on Optoelectronics, Photonics & Applied Physics (OPAP 2014) (2014)
Springer Series in Materials Science (2013): 29-53
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