Su-Yeon Doo - DRAM Design Team, Samsung Electronics

基本信息

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Bio

Su-Yeon Doo received the B.S. degree from Hongik University, Seoul, South Korea, in 2004, and the M.S. degree from Hanyang University, Seoul, in 2008, respectively. She Joined the DRAM Design Team, Samsung Electronics, Hwaseong, South Korea, in 2008. She is currently a Senior Engineer with the Mobile DRAM Design Team, where she was involved in product development and failure analysis of LPDDR4, GDDR5, and GDDR6 memory. Her research interests are row operation features for advanced DRAM process nodes.

Research Interests

Papers共 16 篇Author StatisticsCo-AuthorSimilar Experts

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Scenes from ISSCC 2019 [conference Reports]

Young-Ju Kim, Hyuk-Sang Kwon,Su-Yeon Doo, Minseung Ahn, Y. Kim,Yong-Jae Lee,Dong-Seok Kang,Sung-Geun Do,Chang-Yong Lee,Gun-Hee Cho, J. Park,Jae-Sung Kim,Kyung‐Bae Park,Seung-Hoon Oh, S. S. Lee, Jen-Chou Yu,Ki-Hun Yu,Chul-Hee Jeon,Sang-Sun Kim, Hyo-Kyung Park, J.-K. Lee,Seung-hyun Cho,Keon-Woo Park, Y Kim,Young-Hun Seo,Chang-Ho Shin,Chan-Yong Lee,Sam-Young Bang,Younsik Park,Seouk-Kyu Choi,Byeong-Cheol Kim,Gong-Heum Han,Seung-Jun Bae, Hyuk-Jun Kwon,Jung-Hwan Choi,Young‐Soo Sohn,Kwang-Ii Park,Seong-Jin Jang,Philipp Hillger, Ritesh Jain, Janusz Grzyb, Laven Mavara- Ni, B. Heinemann, Mac Gaëtan, Patrick T. Grogan, Thomas Mounaix, Ulrich Zimmer, Yi-Chieh Wu,Tsao-Hsin Yang,Lun-Chun Chen,Chi-Chang Lin,Hao-Chun Hu, Ying Su,C.A. Wang, James Po, Hao Huang,Hsin-Ming Chen, Connie Lu, Ching-Sung Yang, Rick Shih, J.S. Shen, Sorin P. Voinigescu, Spiegel Kumagai

IEEE Solid-State Circuits Magazineno. 2 (2019): 147-157

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A 16gb 18gb/s/pin GDDR6 DRAM with Per-Bit Trainable Single-Ended DFE and PLL-less Clocking

Young-Ju Kim,Hye-Jung Kwon,Su-Yeon Doo,Yoon-Joo Eom, Young-Sik Kim, M. Ahn,Yong-Hun Kim, Sang-Hoon Jung,Sung-Geun Do,Chang-Yong Lee,Jae-Sung Kim,Dong-Seok Kang,Kyung-Bae Park,Jung-Bum Shin, Jong-Ho Lee,Seung-Hoon Oh, Sang-Yong Lee, J. Yu,Ji-Suk Kwon,Ki-Hun Yu,Chul-Hee Jeon,Sang-Sun Kim,Min-Woo Won,Gun-hee Cho,Hyun-Soo Park,Hyung-Kyu Kim, Jeongwoo Lee, Seunghyun Cho,Keon-Woo Park,Jae-Koo Park, Yong Jae Lee, Yongjun Kim, Y. Seo,Beob-Rae Cho,Chang-Ho Shin,ChanYong Lee, Youngseok Lee,Yoon-Gue Song,Sam-Young Bang,Youn-Sik Park,Seouk-Kyu Choi,Byeong-Cheol Kim, G. Han,Seung-Jun Bae,Hyuk-Jun Kwon, J. Choi, Y. Sohn,Kwang-il Park,Seong-Jin Jang

IEEE International Solid-State Circuits Conferencepp.204-206, (2018)

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An Extremely Low-Standby-Power 3.733gb/S/Pin 2gb Lpddr4 Sdram For Wearable Devices

2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)pp.394-394, (2017)

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A 3.2gb/S/Pin 8gb 1.0v Lpddr4 Sdram With Integrated Ecc Engine For Sub-1v Dram Core Operation

2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC) (2014): 430-+

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