Steven C. Moss

Steven C. Moss (LSM'17) received the B.S. degree in physics and mathematics from Arkansas A&M College, Monticello, AR, USA, in 1970, the M.S. degree in physics from Purdue University, West Lafayette, IN, USA, in 1972, and the Ph.D. degree in physics from North Texas State University, Denton, TX, USA, in 1981. He was a National Research Council Postdoctoral Research Associate with US Naval Research Laboratory from 1981 to 1982. He is currently a Senior Scientist with the Electronics and Photonics Laboratory, The Aerospace Corporation, El Segundo, CA, USA. His research interests include the use of ultrashort optical pulses to simulate the transient effects of ionizing radiation on microelectronic devices, transient photoluminescence from materials and advanced devices, permanent damage produced by radiation effects in microelectronic/optoelectronic devices, and reliability and physics of failure of advanced microelectronic/optoelectronic devices. He is an Associate Editor for the IEEE Transactions on Nuclear Science and serves on the Editorial Board for the MRS Bulletin. He is one of the organizers of the annual Single Event Effects Symposium.