So Young Kim received the M.S. degree from Chungbuk National University, Cheongju, South Korea, in 2006. In 2007, she joined the Memory Division, Samsung Electronics, Hwaseong, South Korea, where she has been involved in low-power DRAM circuit design. Since 2017, she has been working on high-bandwidth memory (HBM) chip design. Her research interests include low-power and high-speed 3-D-DRAM circuit design and technology, and advanced thermal solutions in 3-D-DRAM.