基本信息
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Bio
Sang-Yun Kim was born in Ulsan, Korea, in 1978. He received the B.S. and M.S. degrees from Kyungpook National University, Daegu, Korea, in 2002 and 2004, respectively, both in electrical and electronic engineering.
In 2006, he joined the Research and Development Center of Memory division, Samsung Electronics, Hwaseong, Korea. His research interests include nanoscale CMOS (bulk FinFET) device simulation, reliability analysis of bulk FinFET, and DRAM circuit design.
Research Interests
Papers共 42 篇Author StatisticsCo-AuthorSimilar Experts
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Journal of the Korean Ceramic Societyno. 2 (2024): 1-11
Youngrok Kim,Chihak Ahn,Alexander Schmidt,Joohyun Jeon,Sae-Jin Kim, Hakseon Kim,Hyunjae Kim,Hyeyoung Kwon, Yero Lee,Sung Jin Kim,Dongjin Lee,Jaeduk Lee,
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPADpp.181-184, (2023)
2023 20th International SoC Design Conference (ISOCC)pp.109-110, (2023)
Hyowon Yoon, Jinhun Kim,Sangyeob Kim,Chaeyun Kim,Yeongeun Park, Soontak Kwon, Jaejin Song, Jeongyun Lee,Min-Woo Ha,Ogyun Seok
JAPANESE JOURNAL OF APPLIED PHYSICSno. 11 (2023)
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDMpp.37.7.1-37.7.4, (2022)
Ji Young Park,Gyeom Kim,Jin Bum Kim, Sang-Moon Lee,Sae-jin Kim,Hyoungsoo Ko, Seungmin Lee, Seung Hun Lee,Inkook Jang,Dae Sin Kim
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)pp.233-237, (2021)
2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)pp.394-394, (2017)
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IEEE Electron Device Lettersno. 8 (2015): 802-804
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (2015)
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Author Statistics
#Papers: 43
#Citation: 548
H-Index: 12
G-Index: 23
Sociability: 6
Diversity: 2
Activity: 0
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