Shuangwu Huang - College of Electronics and Information Engineering, Shenzhen University

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论文共 9 篇作者统计合作学者相似作者

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Electrical Performance and Reliability Analysis of Vertical Gan Schottky Barrier Diodes with Dual-Ion Implanted Edge Termination

Bo Li, Huakai Yang, Linfei Gao, Zhengweng Ma, Jinpei Lin, Zhihao Wu,Hsien-Chin Chiu,Hao-Chung Kuo,Chunfu Zhang,Zhihong Liu,Shuangwu Huang,Wei He,

crossref（2024）

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Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Linfei Gao, Ze Zhong, Qiyan Zhang,Xiaohua Li,Xinbo Xiong,Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu,

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYno. 99 (2024): 165-169

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Study of drain induced channel effects in vertical GaN junction field-effect transistors

Zengfa Chen, Wen Yue, Renqiang Zhu, Ming Wang, Xi Zhu, Jinpei Lin,Shuangwu Huang,Xinke Liu

Semiconductor Science and Technology (2024)

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Vertical GaN Schottky Barrier Diode with Record High FOM (1.23GW/cm²) Fully Grown by Hydride Vapor Phase Epitaxy

Ping Zou,Haofan Wang,Junye Wu,Zeliang Liao,Shuangwu Huang,Ze Zhong,Xiaobo Li, Feng Qiu, Wenrong Zhuang, Longkou Chen,Xinke Liu

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.88-90, (2023)

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Gate Circuit improves p-GaN HEMT VTH reliability

Xinke Liu, Zengfa Chen, Ze Zhong, Qiyan Zhang,Xiaobo Li, Feng Qiu, Yong Xu, Wenrong Zhuang, Longkou Chen,Shuangwu Huang, Linfei Gao

PCIM Asia 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpp.334-341, (2023)

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Facile integration of an Al-rich Al_1-xIn_x N photodetector on free-standing GaN by radio-frequency magnetron sputtering

Xinke Liu,Zhichen Lin,Yuheng Lin,Jianjin Chen,Ping Zou,Jie Zhou,Bo Li,Longhai Shen,Deliang Zhu,Qiang Liu,Wenjie Yu,Xiaohua Li,

CHINESE PHYSICS Bno. 11 (2023)

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Facile integration of Al-rich Al_1-xIn_xN photodetector on freestanding GaN by RF- magnetron sputtering

Xinke Liu,Zhichen Lin,Yuheng Lin,Jianjin Chen,Ping Zou,Jie Zhou,Bo Li,Longhai Shen,Deliang Zhu,Qiang Liu,Wenjie Yu,Xiaohua Li,

Chinese Physics B (2023)

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Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm²) Fully Grown by Hydride Vapor Phase Epitaxy

Xinke Liu,Ping Zou,Haofan Wang,Yuheng Lin,Junye Wu, Zengfa Chen,Xinzhong Wang,Shuangwu Huang

IEEE Transactions on Electron Devicesno. 7 (2023): 3748-3753

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1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

Xinke Liu,Feng Lin,Jian Li,Yuheng Lin,Junye Wu, Haofan Wang,Xiaohua Li,Shuangwu Huang,Qi Wang,Hsien-Chin Chiu,Hao-Chung Kuo

IEEE Transactions on Electron Devices（2022）

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