基本信息
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职业迁徙
个人简介
Shih-Hsien Huang received the B.S. degree in material science and
engineering from the National Taipei University of Technology, Taipei, Taiwan, in 2008, and the M.S. degree in
material science and engineering from National Central University, Taoyuan, Taiwan, in 2010. He is currently working
toward the Ph.D. degree with the Graduate Institute of Electronic Engineering, National Taiwan University, Taipei.
His current research interests include the epitaxial growth of Si/Ge using chemical vapor deposition and the
dopant activation of n-type Ge.
研究兴趣
论文共 13 篇作者统计合作学者相似作者
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2016 IEEE International Electron Devices Meeting (IEDM) (2016)
2016 IEEE International Electron Devices Meeting (IEDM)pp.33.6.1-33.6.4, (2016)
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