基本信息
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Bio
Shigeto Maegawa received the B.S., M.S., and Ph.D. degrees in electronic engineering from Kobe University, Kobe, Japan, in 1980, 1982, and 1996, respectively.
He joined the Mitsubishi Electric Corporation, Itami, Japan in 1982. He is currently with the Process and Device Analysis Engineering Development Department, Renesas Technology Corporation, Itami. He was engaged in the R&D of dopant diffusion technology, CCD imaging devices, advanced SRAMs, and SOI devices. He is currently in charge in the R&D department of yield analyzing technology.
Dr. Maegawa received the 2000 R&D 100 Award for the development of the SOI communication LSI. He is a member of the Japan Society of Applied Physics.
Research Interests
Papers共 35 篇Author StatisticsCo-AuthorSimilar Experts
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A. Furukawa,Y. Hirano,T. Ohnakado, T. Ikeda, Y. Kagawa,K. Shintani, K. Nishikawa,S. Yamakawa,T. Ipposhi,S. Maegawa, M. Takeda, H. Arima
msra(2002)
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S. Maeda,K. Shiga,H. Naruoka, N. Hattori,T. Iwamatsu, T. Matsumoto,Y. Hirano,Y. Yamaguchi,T. Ipposhi,S. Maegawa,M. Inuishi
Y. Hirano, T. Matsumoto, S. Maeda,T. Iwamatsu,T. Kunikiyo,K. Nii,K. Yamamoto,Y. Yamaguchi,T. Ipposhi,S. Maegawa,Masahide Inuishi
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Author Statistics
#Papers: 23
#Citation: 352
H-Index: 10
G-Index: 18
Sociability: 4
Diversity: 1
Activity: 0
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