My research interest includes but not limited to growth, processing and testing of Wide and Ultra-Wide Bandgap (UWBG) AlGaN based electronic and optoelectronic devices. In our recent publications we have shown the development of UWBG AlGaN channel HEMTs: Ohmic contact formation, current collapse, high temperature operation, use of high-K dielectrics in AlGaN HEMTs, current density above 1 A/mm, demonstration of high current E-mode device, temperature characteristics of D and E-mode AlGaN HEMTs.