Seung-Jun Bae - Samsung Electronics, Hwasung, Korea

基本信息

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职业迁徙

个人简介

Seung-Jun Bae received the B.S. degree in electrical engineering from Pohang University of Science and Technology, Kyungbuk, Korea, in 2000, where he is currently working toward the Ph.D degree in electrical engineering. His interests include high-speed CMOS chip-to-chip interface circuits, DLL/PLL circuits, and substrate coupling noise in analog and digital mixed-signal ICs.

研究兴趣

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A 16gb 12.7gb/s/pin LPDDR5-Ultra-Pro DRAM with 4-Phase Self-Calibration and AC-Coupled Transceiver Equalization in a 5Th-Generation 10nm DRAM Process

Jin-Hyeok Baek,Jang-Hoo Kim,Yoo-Chang Sung, Jae-Woo Jeong, Jin-Kwan Park, Hyun-Kyu Oh, Bo-Hyeon Lee, Dong-Wan Ko, Tae-Seob Oh, Seung-Gi Hong, Chang-Ki Kwon,Daihyun Lim, Myeong-O. Kim,Seung-Jun Bae, Tae-Young Oh, Sang-Jun Hwang

IEEE International Solid-State Circuits Conferencepp.510-512, (2025)

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A 1.06V 5gb/s/pin 16gb LPDDR4x DRAM Adopting Sense Amplifier with AC-Coupled Equalizer, Stacked Output Driver, and Clock MUX with Inverter-Based Transmission Gate for Mobile and Automotive Application