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个人简介
Serguei Okhonin received the M. Sc. degree in physics from Novosibirsk State University, Novosibirsk, Russia, in 1980, and the Ph.D. degree from the Swiss Federal Institute of Technology Lausanne (EPFL) in 2001.
From 1980 to 1993, he worked as Research Associate at the Institute of Semiconductor Physics, Novosibirsk, focusing on semiconductor device physics. From 1994 to 2003, he was a Research Associate at IMO and LEG, EPFL. He took part in several European projects focused on advanced CMOS technology development. In 2002. he co-founded Innovative Silicon, an IP startup developing a new SOI single-transistor memory concept. This company was funded in December 2003. He acted as CTO and he is currently Chief Scientist at Innovative Silicon. He has authored or co-authored more than 50 papers and filed more than 20 patents.
Dr. Okhonin has served as a member of the program committees of the ASDAM and ESSDERC international conferences.
研究兴趣
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