Activity scope: Molecular beam epitaxy and fundamental studies of semiconductor heterostructures (with quantum wells, quantum dots and superlattices) based on: narrow gap III-V compounds - (Al,Ga,In)/(As,Sb) - for mid-IR optoelectronics and ultra-high frequency HEMTs based on InAs and InSb; wide gap II-VI compounds - (Zn,Cd,Mg)/(S,Se,Te) and ZnO - for visible (blue-green) and UV spectral range optoelectronics, including lasers with electron beam and optical pumping, as well as spintronic studies of diluted magnetic semiconductors; hybrid III-V/II-VI structures with a heterovalent interface in the active region for mid-IR applications and spintronics; III-nitrides - (Ga,In,Al)N - for optoelectronic applications in visible, mid-UV, and deep-UV spectral ranges as well as fundamental studies of In-rich compounds and metal-semiconductor composite nanostructures.